Apparatus and method of removing photoresist layer

ABSTRACT

A method includes introducing ozone toward a photoresist layer over a substrate. The ozone is decomposed into dioxygen and first atomic oxygen. The dioxygen is decomposed into second atomic oxygen. The first atomic oxygen and the second atomic oxygen are reacted with the photoresist layer. An apparatus that performs the method is also disclosed.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a continuation of U.S. patent application Ser. No.14/535,163, filed Nov. 6, 2014, now U.S. Pat. No. 10,486,204, issuedNov. 26, 2019, which is herein incorporated by reference in itsentirety.

BACKGROUND

The present disclosure relates to semiconductor apparatuses. When aphotoresist (PR) strip process is performed on a semiconductor wafer, aphotoresist layer on the semiconductor wafer may be removed from asurface of the semiconductor wafer. In a conventional photoresist stripprocess, Caro's acid is often used to strip the photoresist layer fromthe surface of the semiconductor wafer. However, Caro's acid is formedby the mixture of sulfuric acid (H₂SO₄) and hydrogen peroxide (H₂O₂), sothat Caro's acid is referred to as an environment-unfriendly liquid.After the photoresist layer is removed from the semiconductor wafer byCaro's acid, drained liquid may pollute environment.

Moreover, in previous processes, poly lines are formed on thesemiconductor wafer and covered by the photoresist layer. When Caro'sacid is in contact with the photoresist layer that covers the polylines, the photoresist layer and Caro's acid induce poly damage due toviolent reaction therebetween, such that poly peeling defects caused bythe violent thermal stress of Caro's acid are formed on thesemiconductor wafer. In addition, when the photoresist strip process isperformed on the semiconductor wafer, the temperature of thesemiconductor wafer may be gradually decreased from the center region ofthe semiconductor wafer to the edge region of the semiconductor wafer.Since a low stripping rate occurs at a low temperature region of thesemiconductor wafer, edge remain defects may be formed on the edgeregion of the semiconductor wafer.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a front view of a semiconductor apparatus for removing aphotoresist layer on a substrate according to some embodiments of thepresent disclosure;

FIG. 2 is a schematic view of the semiconductor apparatus shown in FIG.1 when being in operation;

FIG. 3 is a front view of a semiconductor apparatus according to someembodiments of the present disclosure;

FIG. 4 is a schematic view of the semiconductor apparatus shown in FIG.3 when being in operation;

FIG. 5 is a front view of a semiconductor apparatus when being inoperation according to some embodiments of the present disclosure;

FIG. 6 is a flow chart of a method of removing a photoresist layer on asubstrate according to some embodiments of the present disclosure; and

FIG. 7 is a flow chart of a method of removing a photoresist layer on asubstrate according to some embodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

As used herein, “around”, “about” or “approximately” shall generallymean within 20 percent, preferably within 10 percent, and morepreferably within 5 percent of a given value or range. Numericalquantities given herein are approximate, meaning that the term “around”,“about” or “approximately” can be inferred if not expressly stated.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the disclosure.As used herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising”, or “includes” and/or “including” or “has” and/or“having” when used in this specification, specify the presence of statedfeatures, regions, integers, steps, operations, elements, and/orcomponents, but do not preclude the presence or addition of one or moreother features, regions, integers, steps, operations, elements,components, and/or groups thereof.

It will be understood that when an element is referred to as being “on”another element, it can be directly on the other element or interveningelements may be present therebetween. In contrast, when an element isreferred to as being “directly on” another element, there are nointervening elements present. As used herein, the term “and/or” includesany and all combinations of one or more of the associated listed items.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure belongs. It willbe further understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and thepresent disclosure, and will not be interpreted in an idealized oroverly formal sense unless expressly so defined herein.

Reference will now be made in detail to the present embodiments of thedisclosure, examples of which are illustrated in the accompanyingdrawings. Wherever possible, the same reference numbers are used in thedrawings and the description to refer to the same or like parts.

During a photoresist (PR) strip process of a semiconductor wafer, aconventional photoresist stripping apparatus releases Caro's acid toremove a photoresist layer on the wafer. After the photoresist layer isremoved from a surface of the wafer, the wafer may be transfer to a nextdeposition station or a measurement station. However, Caro's acid maypollute environment, and poly damage may occur on the wafer due toviolent reaction between the photoresist layer and Caro's acid. Once theviolent thermal stress of Caro's acid damages the poly lines of thewafer, after the photoresist layer is stripped from the wafer, the polylines of the wafer will be exposed so as to form poly peeling defects.Therefore, if Caro's acid is used to remove the photoresist layer by thephotoresist stripping apparatus, environmental pollution and the polypeeling defects cannot be effectively solved.

FIG. 1 is a front view of a semiconductor apparatus 100 a for removing aphotoresist layer on a substrate according to some embodiments of thepresent disclosure. As shown in FIG. 1, the semiconductor apparatus 100a includes a platform 110, a first ultraviolet lamp 120, and an ozonesupplier 130. The ozone supplier 130 has at least one first nozzle 132.The first ultraviolet lamp 120 is located between the first nozzle 132and the platform 110. In use, the ozone supplier 130 may provide ozonetoward the platform 110 through the first nozzle 132 and the firstultraviolet lamp 120. In some embodiments, the first ultraviolet lamp120 is adjacent to the first nozzle 132.

FIG. 2 is a schematic view of the semiconductor apparatus 100 a shown inFIG. 1 when being in operation. As shown in FIG. 2, the platform 110 isused to support a substrate 210. The substrate 210 has a backside 212and a front side 214 opposite to the backside 212. Before the substrate210 is moved to the semiconductor apparatus 100 a, a photoresist layer220 has been already formed on the front side 214 of the substrate 210by a photolithography process. The aforesaid photolithography processmay include a photoresist coating process (e.g., a spin coating processor a spray coating process), an exposure process, a development process,and an etching process, but the present disclosure is not limited inthis regard.

In some embodiments, the substrate 210 may be a thin slice ofsemiconductor material, such as a silicon crystal, used in thefabrication of integrated circuits (IC) and other microelectronicdevices. The substrate 210 may undergo micro fabrication processes, suchas chemical vapor deposition (CVD) process, physical vapor deposition(PVD) process, and patterning process.

The semiconductor apparatus 100 a is used to remove the photoresistlayer 220 on the substrate 210. When the semiconductor apparatus 100 ais in operation, the platform 110 supports the substrate 210, and thefirst ultraviolet lamp 120 provides first ultraviolet light L1. Theozone supplier 130 having the first nozzle 132 introduces ozone 134toward the substrate 210 through the first ultraviolet light L1, suchthat the first ultraviolet light L1 irradiates the ozone 134. As aresult, at least a part of the ozone 134 is decomposed by the firstultraviolet light L1, and at least a part of the decomposed ozonereaches the photoresist layer 220 to react with the photoresist layer220. The decomposed part of the ozone 134 may be decomposed into atomicoxygen 136 a and dioxygen 138 (i.e., O₂) by the first ultraviolet lightL1.

In some embodiments, the first ultraviolet light L1 has a wavelength ina range from about 245 nm to about 260 nm, such as 253.7 nm. The UVenergy of the first ultraviolet light L1 that has the aforesaidwavelength is about 472 KJ/mol. Since the UV energy of the firstultraviolet light L1 is greater than the bond energy of the organicmolecules of the photoresist layer 220, the atomic oxygen 136 a mayreact with the organic molecules or the free radicals of the photoresistlayer 220 to form other molecules, such as CO₂, H₂O, N₂, etc. As aresult, the photoresist layer 220 may be removed from the substrate 210.

The photoresist layer 220 is removed by the ozone 134 and the firstultraviolet light L1. The first ultraviolet light L1 do not polluteenvironment, the ozone 134 is an environment-friendly molecule, and thedecomposed photoresist layer also forms environment-friendly molecules(e.g., CO₂, H₂O, and N₂). Therefore, the semiconductor apparatus 100 aof the present disclosure is good for environmental protection.

Moreover, since thermal stress of conventional Caro's acid does notoccur in the semiconductor apparatus 100 a, poly damages and polypeeling defects are not apt to be formed on the substrate 210 after thephotoresist layer 220 is removed by the semiconductor apparatus 100 a.Hence, the yield rate of the substrate 210 may be improved.

The platform 110 of the semiconductor apparatus 100 a may include a hotplate 112. The hot plate 112 is under the substrate 210 and configuredto heat the substrate 210. When the temperature of the substrate 210 isincreased, the reaction rate between the photoresist layer 220 and theatomic oxygen 136 a is increased. That is to say, the stripping rate ofthe photoresist layer 220 may be improved. Furthermore, the temperatureof the substrate 210 may be uniform due to the configuration of the hotplate 112. Therefore, the edge region of the substrate 210 may besimilar to the center region of the substrate 210. As a result, afterthe photoresist layer 220 is removed, edge remain defects are not formedon the edge region of the substrate 210.

FIG. 3 is a front view of a semiconductor apparatus 100 b according tosome embodiments of the present disclosure. As shown in FIG. 3, thesemiconductor apparatus 100 b includes the platform 110, the firstultraviolet lamp 120, and the ozone supplier 130. The ozone supplier 130has the first nozzle 132. The difference between this embodiment and theembodiment shown in FIG. 1 is that the semiconductor apparatus 100 bfurther includes a second ultraviolet lamp 140. The wavelength of thesecond ultraviolet lamp 140 is different form the wavelength of thefirst ultraviolet lamp 120. In some embodiments, the second ultravioletlamp 140 has a wavelength in a range from about 180 nm to about 190 nm,such as 184.9 nm.

FIG. 4 is a schematic view of the semiconductor apparatus 100 b shown inFIG. 3 when being in operation. As shown in FIG. 4, when thesemiconductor apparatus 100 b is in operation, the platform 110 supportsthe substrate 210, the first ultraviolet lamp 120 provides firstultraviolet light L1, and the second ultraviolet lamp 140 providessecond ultraviolet light L2. The ozone supplier 130 having the firstnozzle 132 introduces ozone 134 toward the substrate 210 through thefirst and second ultraviolet lights L1, L2, such that the first andsecond ultraviolet lights L1, L2 may irradiate the ozone 134 at the sametime. As a result, at least a part of the ozone 134 is decomposed by thefirst ultraviolet light L1, and at least a part of the decomposed ozonereaches the photoresist layer 220 to react with the photoresist layer220. The decomposed part of the ozone 134 may be decomposed into atomicoxygen 136 a and dioxygen 138 (i.e., O₂) by the first ultraviolet lightL1.

In some embodiments, the second ultraviolet lamp 140 is configured toprovide the second ultraviolet light L2 to decompose at least a part ofthe dioxygen 138, such that at least a part of the decomposed dioxygenreaches the photoresist layer 220 to react with the photoresist layer220. The decomposed part of the dioxygen 138 and other ambient dioxygenmay be decomposed into atomic oxygen 136 b by the second ultravioletlight L2. Therefore, the number of the atomic oxygen 136 a, 136 b isgreater than the number of the atomic oxygen 136 a shown in FIG. 2.

The UV energy of the first ultraviolet light L1 is about 472 KJ/mol, andthe UV energy of the second ultraviolet light L2 is about 647 KJ/mol.Since each of the UV energy of the first ultraviolet light L1 and the UVenergy of the second ultraviolet light L2 is greater than the bondenergy of the organic molecules of the photoresist layer 220, the atomicoxygen 136 a, 136 b may react with the organic molecules or the freeradicals of the photoresist layer 220 to form other molecules, such asCO₂, H₂O, N₂, etc. As a result, the photoresist layer 220 may be removedfrom the substrate 210, and the stripping rate of the photoresist layer220 shown in FIG. 4 is greater than that of the photoresist layer 220shown in FIG. 2.

It is to be noted that the connection relationships of the componentsdescribed above will not be repeated in the following description, andonly aspects related to a semiconductor apparatus having othercomponents will be described.

FIG. 5 is a front view of a semiconductor apparatus 100 c when being inoperation according to some embodiments of the present disclosure. Asshown in FIG. 5, the semiconductor apparatus 100 c includes the platform110, the first ultraviolet lamp 120, and the ozone supplier 130. Theozone supplier 130 has the first nozzle 132. The difference between thisembodiment and the embodiment shown in FIG. 1 is that the platform 110further includes a first liquid supplier 114, and the semiconductorapparatus 100 c further includes a second liquid supplier 150. The firstliquid supplier 114 has at least one second nozzle 115, and the secondliquid supplier 150 has at least one third nozzle 152. The second liquidsupplier 150 is movably arranged between the platform 110 and the firstultraviolet lamp 120.

After the photoresist layer 220 is removed from the substrate 210 by theultraviolet light and the decomposed ozone (e.g., atomic oxygen), thefirst liquid supplier 114 having the second nozzle 115 may introduce aliquid F1 toward the backside 212 of the substrate 210. As a result,impurities (e.g., dust) on the backside 212 of the substrate 210 may beremoved by the liquid F1. In some embodiment, the second nozzle 115 isdisposed in the hot plate 112 of the platform 110.

Furthermore, after the photoresist layer 220 is removed from thesubstrate 210 by the ultraviolet light and the decomposed ozone, thefirst nozzle 132 and the first ultraviolet lamp 120 may be moved upwardaway from the platform 110, and thereafter the third nozzle 152 may bemoved to a position between the first ultraviolet lamp 120 and theplatform 110. Afterwards, the second liquid supplier 150 having thethird nozzle 152 may also introduce a liquid F2 toward the front side214 of the substrate 210. As a result, impurities (e.g., dust orresidual photoresist) on the front side 214 of the substrate 210 may beremoved by the liquid F2.

In some embodiment, the liquids F1, F2 may be deionized (DI) water orchemical detergents, but the present disclosure is not limited in thisregard.

In addition, the platform 110 may further include at least one drainpipe 116. The drain pipe 116 is configured to exhaust the liquids F1,F2. In some embodiments, the drain pipe 116 is disposed in the hot plate112. When the second nozzle 115 and the drain pipe 116 are disposed inthe hot plate 112, the space savings of the semiconductor apparatus 100c may be realized.

Moreover, the semiconductor apparatus 100 c may further include movingdevices 160, 170. The moving device 160 is connected to the first nozzle132, such that the first nozzle 132 may be controlled to lift, lower,and rotate above the platform 110 by the moving device 160. The movingdevice 170 is connected to the third nozzle 152, such that the thirdnozzle 152 may be controlled to lift, lower, and rotate above theplatform 110 by the moving device 170.

For example, when the semiconductor apparatus 100 c is in an idle state,the third nozzle 152 may be moved to a position that is not between thefirst ultraviolet lamp 120 and the platform 110. After the substrate 210with the a photoresist layer is moved to the platform 110, the firstnozzle 132 and the first ultraviolet lamp 120 may be moved downward toapproach the substrate 210. After the photoresist layer on the substrate210 is removed by decomposed ozone and ultraviolet light, the firstnozzle 132 and the first ultraviolet lamp 120 may be moved upward, andthe third nozzle 152 may be moved to a position that is between thefirst ultraviolet lamp 120 and the platform 110.

It is to be noted that the connection relationships of the componentsdescribed above will not be repeated in the following description, andonly aspects related to a method of removing a photoresist layer on asubstrate will be described.

FIG. 6 is a flow chart of a method of removing a photoresist layer on asubstrate according to some embodiments of the present disclosure. Themethod of removing the photoresist layer on the substrate includes thefollowing steps. In step S1, ozone is introduced toward the photoresistlayer. An ozone supplier having at least one first nozzle may be used tointroduce ozone toward the photoresist layer. Thereafter in step S2,first ultraviolet light is used to decompose at least a part of theozone into dioxygen and atomic oxygen, such that at least a part of theatomic oxygen reaches the photoresist layer to react with thephotoresist layer. A first ultraviolet lamp between the first nozzle andthe substrate may be used to form the first ultraviolet light toirradiate the ozone and the photoresist layer.

In some embodiments, the first ultraviolet light has a wavelength in arange from about 245 nm to about 260 nm.

The UV energy of the first ultraviolet light that has the aforesaidwavelength is about 472 KJ/mol. Since the UV energy of the firstultraviolet light is greater than the bond energy of the organicmolecules of the photoresist layer, the atomic oxygen may react with theorganic molecules or the free radicals of the photoresist layer to formother molecules, such as CO₂, H₂O, N₂, etc. As a result, the photoresistlayer may be removed from the substrate.

Moreover, the method of removing the photoresist layer on the substratemay further include that second ultraviolet light is used to decomposeat least a part of the dioxygen, such that at least a part of thedecomposed dioxygen reaches the photoresist layer to react with thephotoresist layer. The decomposed part of the dioxygen and other ambientdioxygen may be decomposed into additional atomic oxygen by the secondultraviolet light. A second ultraviolet lamp between the first nozzleand the substrate may be used to form the second ultraviolet light toirradiate the dioxygen and the photoresist layer.

In some embodiments, the second ultraviolet light has a wavelength in arange from about 180 nm to about 190 nm.

The UV energy of the second ultraviolet light that has the aforesaidwavelength is about 647 KJ/mol. Since the UV energy of the secondultraviolet light is greater than the bond energy of the organicmolecules of the photoresist layer, the atomic oxygen may react with theorganic molecules or the free radicals of the photoresist layer to formother molecules, such as CO₂, H₂O, N₂, etc. As a result, the photoresistlayer may be removed from the substrate.

The method of removing the photoresist layer on the substrate mayfurther include that the substrate is heated to increase the reactionrate between the photoresist layer and the atomic oxygen.

After the photoresist layer is removed from the substrate, a liquid maybe introduced toward the backside of the substrate by a first liquidsupplier having at least one second nozzle. Moreover, another liquid maybe introduced toward the front side of the substrate by a second liquidsupplier having at least one third nozzle. Therefore, the aforesaidliquids may respectively clean the backside and the front side of thesubstrate.

In some embodiments, the liquids may be exhausted by at least one drainpipe under the substrate.

FIG. 7 is a flow chart of a method of removing a photoresist layer on asubstrate according to some embodiments of the present disclosure. Themethod of removing the photoresist layer on the substrate includes thefollowing steps. In step S1, first ultraviolet light is provided. Afirst ultraviolet lamp above the substrate may be used to form the firstultraviolet light. Thereafter in step S2, ozone is introduced toward thephotoresist layer through the first ultraviolet light, such that atleast a part of the ozone is decomposed, and at least a part of thedecomposed ozone reaches the photoresist layer to react with thephotoresist layer. An ozone supplier having at least one first nozzlemay be used to introduce ozone toward the photoresist layer, and thefirst ultraviolet light irradiates the ozone and the photoresist layer.

In some embodiments, the first ultraviolet light has a wavelength in arange from about 245 nm to about 260 nm.

Moreover, the decomposed part of the ozone is decomposed into dioxygenand atomic oxygen by the first ultraviolet light. The UV energy of thefirst ultraviolet light that has the aforesaid wavelength is about 472KJ/mol. Since the UV energy of the first ultraviolet light is greaterthan the bond energy of the organic molecules of the photoresist layer,the atomic oxygen may react with the organic molecules or the freeradicals of the photoresist layer to form other molecules, such as CO₂,H₂O, N₂, etc. As a result, the photoresist layer may be removed from thesubstrate.

The method of removing the photoresist layer on the substrate includesthat second ultraviolet light is used to decompose at least a part ofthe dioxygen, such that at least a part of the decomposed dioxygenreaches the photoresist layer to react with the photoresist layer. Asecond ultraviolet lamp between the first nozzle and the substrate maybe used to form the second ultraviolet light to irradiate the dioxygenand the photoresist layer.

In some embodiments, the second ultraviolet light has a wavelength in arange from about 180 nm to about 190 nm.

The UV energy of the second ultraviolet light that has the aforesaidwavelength is about 647 KJ/mol. Since the UV energy of the secondultraviolet light is greater than the bond energy of the organicmolecules of the photoresist layer, the atomic oxygen may react with theorganic molecules or the free radicals of the photoresist layer to formother molecules, such as CO₂, H₂O, N₂, etc. As a result, the photoresistlayer may be removed from the substrate.

The method of removing the photoresist layer on the substrate mayfurther include that the substrate is heated to increase the reactionrate between the photoresist layer and the decomposed ozone.

In order to prevent using Caro's acid to strip a photoresist layer on asubstrate, a semiconductor apparatus and a method of removing aphotoresist layer are designed to remove a photoresist layer on asubstrate. When the semiconductor apparatus is in operation, anultraviolet lamp provides ultraviolet light, and an ozone supplierhaving a nozzle introduces ozone toward the substrate through theultraviolet light, such that the ultraviolet light irradiates the ozone.As a result, at least a part of the ozone is decomposed by theultraviolet light, and at least a part of the decomposed ozone reachesthe photoresist layer to react with the photoresist layer, therebyremoving the photoresist layer. Moreover, since thermal stress ofconventional Caro's acid does not occur in the semiconductor apparatus,poly damages and poly peeling defects are not apt to be formed on thesubstrate after the photoresist layer is removed by the semiconductorapparatus.

According to some embodiments, a method includes introducing ozonetoward a photoresist layer over a substrate. The ozone is decomposedinto dioxygen and first atomic oxygen. The dioxygen is decomposed intosecond atomic oxygen. The first atomic oxygen and the second atomicoxygen are reacted with the photoresist layer.

According to some embodiments, a method includes introducing a gascomprising ozone toward a photoresist layer over a substrate,irradiating, using a first lamp, the gas with a first light having afirst wavelength, and irradiating, using a second lamp, the gas with asecond light having a second wavelength smaller than the firstwavelength.

According to some embodiments, an apparatus includes a platform, anozone supplier, a first lamp, and a second lamp. The platform isconfigured to support a substrate thereon. The ozone supplier is abovethe platform and is configured to introduce ozone. The first lamp isbelow the ozone supplier and is configured to irradiate the ozone with afirst light having a first wavelength. The second lamp is below thefirst lamp and is configured to emit a second light having a secondwavelength different from the first wavelength.

Although the present disclosure has been described in considerabledetail with reference to certain embodiments thereof, other embodimentsare possible. Therefore, the spirit and scope of the appended claimsshould not be limited to the description of the embodiments containedherein.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the structure of the presentdisclosure without departing from the scope or spirit of the disclosure.In view of the foregoing, it is intended that the present disclosurecover modifications and variations of this disclosure provided they fallwithin the scope of the following claims.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method comprising: moving, by a first movingdevice, a first nozzle above a substrate on a platform; introducing, bythe first nozzle, ozone toward a photoresist layer over the substrate;decomposing the ozone into dioxygen and first atomic oxygen; decomposingthe dioxygen into second atomic oxygen; reacting the first atomic oxygenand the second atomic oxygen with the photoresist layer; after reactingthe first atomic oxygen and the second atomic oxygen with thephotoresist layer, moving, by a second moving device, a second nozzlefrom a first position vertically out of line with the substrate to asecond position directly over the substrate, wherein the first andsecond moving devices are at different sides of the platform; andapplying a liquid to the photoresist layer over the substrate throughthe second nozzle.
 2. The method of claim 1, wherein decomposing theozone comprises: irradiating the ozone with a first light having a firstwavelength.
 3. The method of claim 2, wherein the first wavelength is ina range from about 245 nm to about 260 nm.
 4. The method of claim 2,wherein decomposing the dioxygen comprises: irradiating the dioxygenwith a second light having a second wavelength different from the firstwavelength.
 5. The method of claim 4, wherein the second wavelength isin a range from about 180 nm to about 190 nm.
 6. The method of claim 2,wherein decomposing the dioxygen comprises: irradiating the dioxygenwith a second light having a second wavelength smaller than the firstwavelength.
 7. The method of claim 1, wherein decomposing the ozonecomprises: moving a first lamp toward the substrate; and irradiating theozone with a first light of the first lamp.
 8. The method of claim 1,wherein decomposing the dioxygen comprises: moving a second lamp towardthe substrate; and irradiating the dioxygen with a second light of thesecond lamp.
 9. The method of claim 1, wherein reacting the first atomicoxygen and the second atomic oxygen with the photoresist layer isperformed such that the photoresist layer is removed from the substrate.10. A method comprising: moving, by a first moving device, a firstnozzle along with a first lamp and a second lamp toward a photoresistlayer over a substrate on a platform; introducing, using the firstnozzle, a gas comprising ozone toward the photoresist layer over thesubstrate; irradiating, using the first lamp, the gas with a firstultraviolet light having a first wavelength; irradiating, using thesecond lamp, the gas with a second ultraviolet light having a secondwavelength smaller than the first wavelength; moving, by a second movingdevice, a second nozzle above the substrate, wherein the first andsecond moving devices are at different sides of the platform; andintroducing, by the second nozzle, a liquid to the substrate.
 11. Themethod of claim 10, wherein irradiating the gas with the firstultraviolet light is performed such that the ozone of the gas isdecomposed into dioxygen and first atomic oxygen.
 12. The method ofclaim 11, wherein irradiating the gas with the second ultraviolet lightis performed such that the dioxygen is decomposed into second atomicoxygen.
 13. The method of claim 10, wherein the first and second lampsare used to irradiate the gas concurrently.
 14. The method of claim 10,further comprising: introducing, by a third nozzle in the platform, aliquid toward a backside of the substrate.
 15. The method of claim 14,wherein the liquid introduced by the third nozzle is the same as theliquid introduced by the second nozzle.
 16. An apparatus comprising: aplatform configured to support a substrate thereon; an ozone supplierabove the platform and configured to introduce ozone, wherein the ozonesupplier has a first nozzle; a first moving device configured to movethe first nozzle; a first lamp below the ozone supplier and configuredto irradiate the ozone with a first light having a first wavelength; asecond lamp below the first lamp and configured to emit a second lighthaving a second wavelength smaller than the first wavelength; a secondnozzle configured to introduce a liquid to the substrate; and a secondmoving device configured to move the second nozzle, wherein the firstand second moving devices are at different sides of the platform. 17.The apparatus of claim 16, wherein the ozone supplier is configured tointroduce the ozone through the first nozzle thereof.
 18. The apparatusof claim 16, wherein the second nozzle is lower than the first lamp. 19.The apparatus of claim 16, wherein the first moving device is furtherconfigured to move the first lamp.
 20. The apparatus of claim 16,wherein the second lamp is directly below the first lamp.